Thyristor Diode Module - Unitshine Semiconductor

unitshine-thyristor-diode-module-003

Thyristor Diode Module is the derivative of the thyristor module also known as the SCR rectifier. The thyristor is structurally a PNPN four-layer semiconductor,with three poles: Anode, Cathode and Gate. Thyristor shall work when positive voltage is exerted and gate pole has a trigger current. Its derivative devices are fast thyristor, two-way thyristor, reverse thyristor and light control thyristor etc, and marked in the circuit with the text symbol "V" or "VT" (or "SCR" in old standard).

Thyristor Diode Module is composed of several thyristor and several diodes, thus having the characteristics of silicon rectifier device, able to work in high voltage, high current conditions, and its work process can be controlled, which is widely used in controllable rectifier, AC voltage regulator, contactless electronic switches and inverters.

Features

Our thyristor diode modules possess the following features:

Electric insulation is realized between Power Terminals and Metal Base Plate.
Fine temperature property and power circulation ability.
Low voltage drop for on-state.
Simple installation and easy maintenance.

Application & Specification

Application

Thyristor Diode Modules are widely used in the following fields:

Various rectifier power supply.
AC/DC motor control.
Inverters.
UPS power supply.
Industry temperature control.

Specs: 25A - 165A

Type	I_T（AV） @T_C		V_DRM V_RRM	I_DRM I_RRM	V_TM @I_TM		I_GT	V_GT	dv/dt	di/dt	I_TSM	I²t	VTO	r_T	R_thjc	V_ISOL	T_JM	Fig.
	I_T（AV） @T_C			125℃	25℃				125℃		10ms		125℃
	A	℃	V	mA	V	A	mA	V	V/μS	A/μS	KA	KA²S	V	mΩ	℃/W	V	℃
MF*25	25	85	800-1800	15	1.65	80	100	2.5	500	100	0.55	1.5	0.8	7.5	0.95	2500	125	M01
MF*40	40	85	800-1800	15	1.65	120	100	2.5	500	100	1.0	5	0.8	4.5	0.65	2500	125	M01
MF*63	63	85	800-1800	15	1.65	200	100	2.5	500	100	1.25	7.8	0.8	3.3	0.45	2500	125	M01
MF*80	80	85	800-1800	15	1.7	300	100	2.5	500	100	1.6	12.8	0.8	2.4	0.36	2500	125	M01
MF*100	100	85	800-1800	15	1.65	300	100	2.5	500	100	2.2	24	0.8	2.05	0.28	2500	125	M01
MF*100	100	85	2000-2600	15	1.85	300	150	2.5	500	100	2.0	20	0.9	2.05	0.28	3000	125	M01A
MF*105	105	85	800-1800	15	1.65	300	100	2.5	500	100	2.2	24	0.8	2.05	0.28	2500	125	M01A
MF*115	115	85	2800-3600	30	1.95	300	200	3.0	1000	150	2.5	31	1.02	2.5	0.25	4200	125	M03
MF*130	130	85	800-1800	20	1.55	400	150	2.0	1000	150	4	80	0.8	1.35	0.21	2500	125	M03
MF*130	130	85	2000-2600	30	1.95	400	150	2.5	1000	150	3.8	72	0.9	2.26	0.2	3000	125	M03
MF*130	130	85	2800-3600	30	1.92	400	150	3.0	1000	150	2.6	33.5	1.02	2	0.19	4200	125	M03
MF*160	160	85	800-1800	20	1.52	500	150	2.5	1000	150	5	130	0.8	1.02	0.19	2500	125	M03
MF*160	160	85	2000-2600	30	1.85	500	150	2.5	1000	150	4	80	0.9	1.3	0.18	3000	125	M03
MF*165	165	85	2800-3600	40	1.92	500	200	3.0	1000	200	3.5	61.3	1.02	1.2	0.16	4200	125	M04
Note: MF* stands for any kind among MFC, MFK and MFA, and MFX is made based on MTC with connection exteriorlly added.

Specs: 200A - 430A

Type	I_T（AV） @T_C		V_DRM V_RRM	I_DRM I_RRM	V_TM @I_TM		I_GT	V_GT	dv/dt	di/dt	I_TSM	I²t	V_TO	r_T	R_thjc	V_ISOL	T_JM	Fig.
	I_T（AV） @T_C			125℃	25℃				125℃		10ms		125℃
	A	℃	V	mA	V	A	mA	V	V/μS	A/μS	KA	KA²S	V	mΩ	℃/W	V	℃
MF*200	200	85	800-1800	30	1.55	600	200	2.5	1000	150	6	180	0.8	0.8	0.18	2500	125	M03
MF*200	200	85	2000-2600	30	1.85	600	200	2.5	1000	150	6.3	198	0.9	0.95	0.14	3000	125	M04
MF*200	200	85	2800-3600	40	1.92	600	200	3.0	1000	150	4	80	1.02	1.45	0.13	4200	125	M04
MF*250	250	85	800-1800	30	1.55	800	200	2.5	1000	200	7.5	280	0.8	0.65	0.13	2500	125	M04
MF*250	250	85	2000-2600	30	1.85	800	200	2.5	1000	200	7	245	0.9	0.65	0.12	3000	125	M04
MF*250	250	85	3800-4400	60	2.2	800	200	3.5	1000	200	5	125	1.15	1.20	0.1	4500	125	M06
MF*300	300	85	800-1800	30	1.56	1000	200	3.0	1000	200	8.5	360	0.8	0.53	0.11	2500	125	M04
MF*300	300	85	2800-3600	40	1.92	1000	200	3.5	1000	200	5.5	150	1.02	0.88	0.1	4200	125	M06
MF*400	400	85	2800-3600	60	1.95	1200	200	3.5	1000	200	9	405	1.02	0.75	0.075	4200	125	M06
MF*400	400	85	800-1800	60	1.56	1200	200	2.5	1000	200	12	720	0.8	0.48	0.08	2500	125	M07
MF*400	400	85	2000-2600	60	1.78	1200	200	2.5	1000	200	10.5	550	0.9	0.52	0.072	3000	125	M07
MF*400	400	85	3800-4400	100	1.95	1200	250	3.5	1000	200	14	980	1.2	0.65	0.06	4500	125	M09
MF*425	425	85	800-1800	60	1.5	1500	200	2.5	1000	200	12.5	781	0.8	0.3	0.078	2500	125	M06
MF*430	430	85	2000-2600	60	1.78	1500	200	2.5	1000	200	12	720	0.9	0.45	0.065	3000	125	M06
Note: MF* stands for any kind among MFC, MFK and MFA, and MFX is made based on MTC with connection exteriorlly added.

Specs: 500A - 1200A

Type	I_T（AV） @T_C		V_DRM V_RRM	I_DRM I_RRM	V_TM @I_TM		I_GT	V_GT	dv/dt	di/dt	I_TSM	I²t	V_TO	r_T	R_thjc	V_ISOL	T_JM	Fig.
	I_T（AV） @T_C			125℃	25℃				125℃		10ms		125℃
	A	℃	V	mA	V	A	mA	V	V/μS	A/μS	KA	KA²S	V	mΩ	℃/W	V	℃
MF*500	500	85	2000-2600	60	1.85	1500	200	2.5	1000	200	14	980	0.9	0.36	0.065	3000	125	M06
MF*500	500	85	800-1800	60	1.45	1500	200	2.5	1000	200	14	980	0.8	0.33	0.065	2500	125	M07
MF*500	500	85	2800-3600	100	1.92	1500	250	3.5	1000	200	18	1620	1.15	0.55	0.06	4200	125	M09
MF*510	510	85	800-1800	60	1.45	1500	200	2.5	1000	200	14	980	0.8	0.33	0.065	2500	125	M06
MF*570	570	85	800-1800	60	1.45	1500	200	2.5	1000	200	17	1445	0.8	0.3	0.065	2500	125	M06
MF*630	630	85	800-1800	80	1.55	2000	200	2.5	1000	200	18	1620	0.8	0.22	0.06	2500	125	M08
MF*650	650	85	2000-2600	80	1.72	2000	200	2.5	1000	200	21	2205	0.9	0.35	0.06	3000	125	M09
MF*800	800	85	800-1800	80	1.42	2500	200	2.5	1000	200	26	3380	0.8	0.195	0.06	2500	125	M09
MF*1000	1000	70	800-1800	80	1.55	3000	200	2.5	1000	200	29	4200	0.80	0.155	0.055	2500	125	M09
MF*1200	1200	85	800-1800	100	1.58	3000	200	2.5	1000	200	32	5120	0.8	0.135	0.055	2500	125	M10
Note: MF* stands for any kind among MFC, MFK and MFA, and MFX is made based on MTC with connection exteriorlly added.

Installation Precautions

The modules should be installed and commissioned by an operator with relevant electric, electronic and electrical qualification:

Considering the fluctuation of the grid voltage, the current of load is generally several times larger than its rated current at the start while the thyristor chip is less resistant to current shock, it is recommended that you set the appropriate margin when selecting electric current specifications of the modules.
Module chip's working temperature: -40 ℃ ∽ 125 ℃ for SCR; ambient temperature shall not be higher than 40 ℃; environmental humidity shall be less than 86%.
The environment should be no severe vibration and shock where there should be no metal with corrosion and impurities & air that damagesg the insulation.
For thyristor module ise insulated type (meaning insulation resistance between the module terminals and the copper bottom plate is greater than 2.5KV), multiple modules can be mounted on the same heat sink, with earthing wire.
The installation surface of a radiator should be evenly flat, smooth and without scratches, bumps and debris, and surface finish of the radiator should be less than 10μm.
When power modules are mounted on the radiator, a thin layer of thermal grease should be applied between the contact surfaces. Before grease applying, please remove the oxide layer of the radiator contact surface with fine sandpaper, then wipe the surface with absolute ethanol, so that the contact is good enough to reduce the thermal resistance.
When a module is fastened to the surface of the radiator, please use M5 or M6 screws and spring washers then tighten the screws with 4NM torque.
The connection with main electrodes of the modules should be copper busbars with a smooth surface and good contact. After the modules have been in operation for 3 hours, the screws must be tightened again.

Our team is in dedicate and professional position to provide above information for our customers and related operators to properly deal with what we supply to all over the world. You are welcome to contact us to get such information or data, and please address This email address is being protected from spambots. You need JavaScript enabled to view it.