
Structurally different from ordinary PN junction diode, fast recovery diode belongs to the PIN junction diode. Between the P-type silicon material and N-type silicon material, the base area I is added which constitutes the PIN silicon structure. As the base area is very thin, the reverse recovery charge is very small, the reverse recovery time is shorter, the forward voltage drop is lower and the reverse breakdown voltage is higher.
Features
Our fast recovery diodes possess the following features:
- Diffusion junction.
- Flat type metal-ceramic packages with pressure contacts.
- Double sides cooling.
- Short recovery time.
- Small recovery charge in reverse.
Application & Specification